http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102345230-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-06 |
| filingDate | 2019-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102345230-B1 |
| titleOfInvention | Etching composition for silicon nitride and method for preparing the same |
| abstract | Disclosed are a silicon nitride film etchant composition using a reduced pressure condition and a method for preparing the same. In the method for preparing the silicon nitride film etchant composition, the reaction temperature can be lowered by using a reduced pressure condition in the tertiary reaction, and the yield of the obtained silylphosphine oxide-based compound or silylphosphine-based compound can be increased. |
| priorityDate | 2019-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 50.