http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102336608-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823857 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| filingDate | 2020-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102336608-B1 |
| titleOfInvention | Transistor, ternary inverter device including the same, method of fabricating transistor |
| abstract | The transistor includes a constant current forming layer, a channel layer provided on the constant current forming layer, a pair of source/drain regions spaced apart from each other on the constant current forming layer with a channel layer therebetween, a gate electrode provided on the channel layer, and a gate electrode and a channel layer. and a gate ferroelectric film provided therebetween. |
| priorityDate | 2019-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.