| abstract |
The TDDB lifetime of a semiconductor device with Cu wiring is improved. The semiconductor device includes an interlayer insulating layer INS2, adjacent Cu wirings M1W formed inside the interlayer insulating layer INS2, a surface of the interlayer insulating layer INS2 and a surface of the Cu wirings M1W, and an interlayer insulating layer INS2 and an insulating barrier film BR1 covering the Cu wirings M1W. And, between the adjacent Cu wirings M1W, the interlayer insulating film INS2 has a damage layer DM1 on its surface, and a nitrogen concentration higher than the nitrogen concentration of the damage layer DM1 at a position deeper than the damage layer DM1. and an electric field alleviation layer ER1 having |