http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102332870-B1
Outgoing Links
Predicate | Object |
---|---|
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4554 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
filingDate | 2014-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2021-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2021-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-102332870-B1 |
titleOfInvention | Method for forming ti-containing film by peald using tdmat or tdeat |
abstract | A method of forming a Ti-containing film on a substrate by plasma enhanced atomic layer deposition (PEALD) using tetrakis(dimethylamino)titanium (TDMAT) or tetrakis(diethylamino)titanium (TDEAT), wherein the substrate is disposed introducing TDMAT and/or TDEAT into the reaction space in pulses; continuously introducing an NH 3 free reactant gas into the reaction space; applying RF power in pulses to the reaction space, wherein the pulses of TDMAT and/or TDEAT and the pulses of RF power do not overlap; and (iv) repeating the above steps to deposit a Ti-containing film on the substrate. |
priorityDate | 2013-10-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.