| abstract |
A multi-component coating composition for a surface of a semiconductor process chamber component comprises at least one first film layer of yttrium oxide or yttrium fluoride coated on the surface of the semiconductor processing chamber component using an atomic layer deposition process, and atomic layer deposition. at least one second film layer of an additional oxide or additional fluoride coated on the surface of the semiconductor processing chamber component using a process, wherein the multi-component coating composition is YO x F y , YAl x O y , YZr x O y and YZr x Al y O z . |