Predicate |
Object |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0245 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02603 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30608 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-265 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 |
filingDate |
2018-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2021-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate |
2021-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-102327914-B1 |
titleOfInvention |
Etching solution for selectively removing silicon-germanium alloy from a silicon-germanium/silicon stack during manufacture of a semiconductor device |
abstract |
water; oxidizing agents; water-miscible organic solvents; a source of fluoride ions; and optionally, an etchant comprising a surfactant. Such compositions are useful for selectively removing silicon-germanium over polysilicon from microelectronic devices having such material(s) thereon during their manufacture. |
priorityDate |
2017-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |