| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30625
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-02 |
| filingDate |
2019-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-11-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2021-11-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-102320657-B1 |
| titleOfInvention |
Tungsten chemical mechanical planarization (cmp) with low dishing and low erosion topography |
| abstract |
The present invention relates to compositions, methods and systems that can be used for chemical mechanical planarization (CMP) of tungsten containing semiconductor devices. CMP slurries comprising a bicyclic amidine additive provide low dishing and low corrosion topography. |
| priorityDate |
2018-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |