| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1454
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30625
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-02 |
| filingDate |
2019-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-11-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2021-11-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-102320653-B1 |
| titleOfInvention |
Tungsten chemical mechanical polishing slurries for reduced oxide erosion |
| abstract |
The present invention relates to slurries, methods and systems that can be used for chemical mechanical planarization (CMP) of tungsten containing semiconductor devices. Corresponding to a decrease in pH by tungsten polishing by-products, the use of CMP slurries with additives to maintain the pH above 4 can significantly weaken the erosion of the high-density metal (eg tungsten) structure. |
| priorityDate |
2018-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |