http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102320341-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42384 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02664 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02483 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02472 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2020-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-11-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-11-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102320341-B1 |
| titleOfInvention | Semiconductor device and method for manufacturing the same |
| abstract | The present invention suppresses diffusion of indium into the insulating film formed in contact with the oxide semiconductor film, and improves the interface characteristics of the insulating film in contact with the oxide semiconductor film in a transistor using the oxide semiconductor film, and has stable electrical characteristics and reliability This high semiconductor device is provided. By reducing the concentration of indium on the surface in the oxide semiconductor film containing indium, diffusion of indium into the insulating film formed in contact with the oxide semiconductor film is prevented. In addition, by reducing the indium concentration on the surface of the oxide semiconductor film, a layer containing substantially no indium can be formed on the surface, and by making this layer a part of the insulating film, the interface characteristics between the oxide semiconductor film and the insulating film in contact with the oxide semiconductor film make it good |
| priorityDate | 2011-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 61.