| abstract |
A scalable process for fabricating graphene/hexagonal boron nitride (h-BN) heterostructures is disclosed herein. This process was performed for the nucleation and growth of large-area, uniform and ultra-thin h-BNs directly on Si 3 N 4 /Si substrates (B/N atomic ratio = 1:1.11±0.09) on silicon nitride coated silicon (Si). 3 N 4 /Si) interfacing of (BN) X H y -radicals with active sites on the surface. In addition, the resulting h-BN surface and van der Waals-bonded monolayer graphene benefit from a reduced (3.4-fold) roughness of h-BN compared to Si 3 N 4 /Si. As the reduced surface roughness leads to the reduction of surface roughness scattering and charge impurity scattering, it shows enhanced intrinsic charge carrier mobility (3 fold) for graphene on h-BN/Si 3 N 4 /Si. |