| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66477
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66348
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B10-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42316 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| filingDate |
2015-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2021-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-102317646-B1 |
| titleOfInvention |
Semiconductor device and method for manufacturing the same |
| abstract |
The present invention relates to a semiconductor device including a field effect transistor, and more particularly, to a substrate having an active pattern thereon; and a separation structure crossing the active pattern and dividing the active pattern into a first region and a second region. In this case, the isolation structure may include a first insulating pattern filling a recess region defined between the first and second regions, and the first insulating pattern may have a concave upper surface. |
| priorityDate |
2015-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |