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filingDate 2015-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2021-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2021-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-102316267-B1
titleOfInvention Memory device having COP structure, memory package including the same and method of manufacturing the same
abstract The memory device includes a semiconductor substrate, a peripheral circuit formed on an upper surface of the semiconductor substrate, a lower insulating film covering the peripheral circuit, a base layer formed on the upper surface of the lower insulating film, a memory cell array formed on the upper surface of the base layer, the memory and an upper insulating layer covering the cell array, and input/output pads formed on a lower surface of the semiconductor substrate and vertically overlapping a portion of the memory cell array. The size of the memory device is reduced through the adoption of the COP structure and efficient interface arrangement.
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