http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102312262-B1

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filingDate 2014-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2021-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2021-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-102312262-B1
titleOfInvention Semiconductor device and method of fabricating the same
abstract A semiconductor device according to an embodiment of the present invention includes a substrate, a plurality of gate electrodes disposed on the substrate, and source/drain regions disposed on both sides of the gate electrodes, wherein the gate electrodes are disposed on the substrate. a gate insulating pattern sequentially stacked, a lower work function electrode pattern having a recessed upper surface, and an upper work function electrode pattern conformally formed on the recessed upper surface of the lower work function electrode pattern, wherein the lower work function electrode pattern Upper surfaces of the work function electrode patterns have the same height, and the upper work function electrode patterns have different thicknesses.
priorityDate 2014-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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