http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102307728-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1436 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1463 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-02 |
| filingDate | 2014-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102307728-B1 |
| titleOfInvention | Cmp compositions and methods for selective removal of silicon nitride |
| abstract | The present invention provides a method and chemical mechanical polishing composition for polishing a substrate comprising silicon dioxide and silicon nitride that provides selective removal of SiN over silicon oxide (eg, PETEOS) on a patterned wafer. In one embodiment, a CMP method comprises abrading a surface of a substrate comprising SiN and silicon oxide with a CMP composition to remove at least some SiN from the substrate. The CMP composition comprises a particulate abrasive (eg, ceria), wherein the composition has a pH greater than 3, contains a cationic polymer having a quaternized nitrogen-heteroaromatic pendant moiety, and is suspended in an aqueous carrier; consists essentially of, or consists of. |
| priorityDate | 2013-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 55.