| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01074
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01005
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01013 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76876
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0272
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0281
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67017
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-303
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28194
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28562
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 |
| filingDate |
2019-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2021-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-102307268-B1 |
| titleOfInvention |
Film forming method and film forming system |
| abstract |
This is to reduce the stress of the metal layer while reducing the resistance of the metal layer even when the thickness is reduced. The film forming method includes a cancellation layer forming step of forming a cancellation layer for canceling the orientation of the underlying film in a reduced pressure atmosphere on a substrate on which the underlying film is formed, which is disposed in a processing container, and a metal material gas and boron in the substrate on which the cancellation layer is formed It has an initial film formation process of supplying a gas to form an initial metal film, and a main film formation process of forming a metal main film formation on a substrate on which the initial film is formed. |
| priorityDate |
2018-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |