http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102307254-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31058 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1463 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 |
| filingDate | 2015-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102307254-B1 |
| titleOfInvention | Cmp method for suppression of titanium nitride and titanium/titanium nitride removal |
| abstract | Described herein is a chemical mechanical polishing (CMP) method for the removal of a metal layer deposited on a titanium nitride (TiN) or titanium/titanium nitride (Ti/TiN) barrier layer. The method comprises abrading a metal layer using an acidic CMP composition to expose an underlying TiN or Ti/TiN layer, wherein the TiN or Ti/N layer is polished at a low rate due to the presence of a surfactant inhibitor . The acidic CMP composition comprises a particulate abrasive (eg, silica, alumina) suspended in a liquid carrier containing a surfactant selected from the group consisting of anionic surfactants, nonionic surfactants, cationic surfactants, and combinations thereof. do. |
| priorityDate | 2014-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 77.