| abstract |
An object of the present invention is to improve the characteristics of a semiconductor device. An SOI substrate having an active region and an element isolation region (element isolation insulating film STI), a gate electrode GE1 formed in the active region through a gate insulating film GI1, and a dummy gate electrode DGE1 formed in the element isolation region A semiconductor device is constructed to have A dummy sidewall film DSW is formed on both sides of the dummy gate electrode DGE1, and the sidewall film is arranged to coincide with or overlap the boundary between the active region and the element isolation region (element isolation insulating film STI). . According to such a configuration, even when the contact hole C1 is formed to be displaced, it is possible to prevent the plug P1 from reaching, for example, the insulating layer BOX or the supporting substrate SB due to the deepness thereof. |