http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102304791-B1

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filingDate 2014-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2021-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2021-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-102304791-B1
titleOfInvention Optimizing gate profile for performance and gate fill
abstract Systems and methods for optimizing a gate profile for performance and gate filling are disclosed. A semiconductor device having an optimized gate profile includes a semiconductor substrate and a fin extending over the semiconductor substrate. A pair of source and drain regions is disposed on opposite sides of the channel region. A gate stack is disposed over the channel region, the gate stack including a top portion separated from a bottom portion by a tapered portion. At least a portion of the top portion and the tapered portion is disposed over the pin.
priorityDate 2014-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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