| abstract |
A semiconductor device includes a through electrode structure, a passivation layer pattern structure, and a pad structure. The through-electrode structure penetrates the substrate, a portion is exposed to the upper portion of the substrate, has a concave upper surface, and includes a through-electrode and an insulating layer pattern. The through electrode includes a conductive pattern and a barrier pattern surrounding the sidewall of the conductive pattern, and the insulating layer pattern surrounds the sidewall of the through electrode. The upper surface of the conductive pattern is lower than the upper surface of the insulating layer pattern. The passivation layer pattern structure is formed on the upper surface of the substrate and surrounds the sidewall of the exposed portion of the through-electrode structure, and includes a photosensitive organic material. The pad structure is in contact with the exposed upper surface of the through-electrode structure portion and has a flat upper surface. |