Predicate |
Object |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7855 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02343 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76229 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
filingDate |
2019-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2021-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate |
2021-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-102301460-B1 |
titleOfInvention |
Silicon oxide layer for oxidation resistance and method forming same |
abstract |
The integrated circuit structure includes a bulk semiconductor region, a first semiconductor strip overlying and connected to the bulk semiconductor region, and a dielectric layer comprising silicon oxide. Silicon oxide is doped with carbon atoms. The dielectric layer includes a horizontal portion over and in contact with the top surface of the bulk semiconductor region, and a vertical portion connected to one end of the horizontal portion. The vertical portion is in contact with the sidewall of the lower portion of the first semiconductor strip. A top portion of the first semiconductor strip protrudes higher than a top surface of the vertical portion to form a semiconductor fin. The horizontal portion and the vertical portion have the same thickness. A gate stack extends over sidewalls and top surfaces of the semiconductor fins. |
priorityDate |
2018-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |