http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102297163-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-32 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-32 |
| filingDate | 2018-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102297163-B1 |
| titleOfInvention | Manufacturing method of photomask blank, photomask blank, manufacturing method of photomask, photomask, and chrome metal target |
| abstract | The present invention includes a transparent substrate, a silicon-containing film and a chromium-containing film in contact with each other, or a chromium-containing film in contact with the transparent substrate, wherein the silicon-containing film is silicon alone, silicon and at least one light source selected from oxygen, nitrogen and carbon. a silicon compound composed of silicon, one or more transition metals selected from titanium, vanadium, cobalt, nickel, zirconium, niobium, molybdenum, hafnium, tantalum and tungsten, silicon, and one or more light sources selected from oxygen, nitrogen and carbon The chromium-containing film is made of a silicon-containing material selected from transition metal silicon compounds made of carbon, and the chromium-containing film of the photomask blank made of the chromium-containing material is formed by sputtering using a chromium metal target having a silver content of 1 mass ppm or less. . According to the present invention, even when a photomask is repeatedly used for pattern exposure by ArF excimer laser light or the like, the occurrence of defects in the silicon-containing film is reduced. |
| priorityDate | 2017-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 72.