| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136286
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-134309
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F2201-123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-1213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136213 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B99-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78648
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-483
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06K19-0723
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-26 |
| filingDate |
2014-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2021-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-102294511-B1 |
| titleOfInvention |
Semiconductor device and manufacturing method thereof |
| abstract |
A transistor having high field-effect mobility is provided. A transistor having specified electrical characteristics is provided. A transistor having a low off-state current (current in the off-state) is provided. Alternatively, a semiconductor device including such a transistor is provided. Such a semiconductor device includes a first insulating film, an oxide semiconductor film on the first insulating film, a second insulating film on the oxide semiconductor film, and an oxide semiconductor film with a first insulating film or a second insulating film interposed between the oxide semiconductor film and the conductive film. It includes an overlapping conductive film. The composition of the oxide semiconductor film is continuously changed between the first insulating film and the second insulating film. |
| priorityDate |
2013-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |