| abstract |
To provide a semiconductor device capable of adjusting the profiles of a gate electrode and a gate spacer using a hybrid interlayer insulating film. The semiconductor device includes a gate electrode on a substrate, a gate spacer having upper and lower portions on a sidewall of the gate electrode, a lower interlayer insulating layer overlapping the lower portion of the gate spacer on the substrate, and the lower interlayer insulating layer , an upper interlayer insulating layer overlapping an upper portion of the gate spacer, wherein the lower interlayer insulating layer is not interposed between the upper interlayer insulating layer and an upper portion of the gate spacer. |