http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102284240-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42356 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78648 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 |
| filingDate | 2020-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102284240-B1 |
| titleOfInvention | Semiconductor device, power diode, and rectifier |
| abstract | To provide a semiconductor device having electrical characteristics such as high withstand voltage, low reverse saturation current, and high on-state current. Among them, it is to provide a power diode and a rectifier composed of a nonlinear element. a first electrode; a gate insulating layer covering the first electrode; an oxide semiconductor layer in contact with the gate insulating layer and overlapping the first electrode; and a pair of second electrodes covering the ends of the oxide semiconductor layer; an insulating layer covering the pair of second electrodes and the oxide semiconductor layer, and a third electrode that is in contact with the insulating layer and is formed between the pair of second electrodes, wherein the pair of second electrodes is on the end face of the oxide semiconductor layer It is a semiconductor device in contact. |
| priorityDate | 2010-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.