http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102268296-B1

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filingDate 2014-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2021-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2021-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-102268296-B1
titleOfInvention Nonvolatile memory device
abstract A nonvolatile memory device according to an embodiment of the present invention includes: a memory cell array including a plurality of cell strings, each of the plurality of cell strings including memory cells stacked in a direction perpendicular to a substrate; and a peripheral circuit connected to the memory cell array through a plurality of conductive lines and including a plurality of transistors, wherein each of the plurality of transistors is formed on a substrate and first and second doped with a conductive material different from the substrate regions and a gate electrode disposed between the first and second regions, wherein at least one first region of the plurality of transistors includes a plurality of first contact plugs and a plurality of first contact plugs extending in a direction perpendicular to the substrate The first contact plugs are connected to at least one conductive line among the plurality of conductive lines through a plurality of second contact plugs extending in a direction perpendicular to the substrate, and each of the plurality of first contact plugs has a plurality of contact areas. It is different from the contact area of each of the second contact plugs of .
priorityDate 2014-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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