http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102262830-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7846 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66484 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0657 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7855 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7853 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41791 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7854 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2015-11-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102262830-B1 |
| titleOfInvention | Semiconductor device |
| abstract | A semiconductor device is provided. The semiconductor device includes a first fin-shaped pattern including first and second side surfaces facing each other, a first trench having a first depth in contact with the first side surface, and a second depth different from the first depth in contact with the second side surface. a second trench, a first field insulating layer filling a part of the first trench, and a second field insulating layer filling a part of the second trench, wherein the first fin-shaped pattern has a lower portion and an upper portion having a narrower width than the lower portion wherein the first field insulating layer includes a first lower field insulating layer contacting the lower portion and a first upper field insulating layer contacting the upper portion having a first step difference at a boundary between the upper portion and the lower portion. |
| priorityDate | 2015-11-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 50.