http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102257985-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f140c24f626576edd1510c41b0adab42 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-141 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-4213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-0035 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-00 |
| filingDate | 2020-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6d2308117364d4ba2e46d9027face1c3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e6ccefcd9e6497be37f05caad33ca759 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d5924f173d6f52a1342f031e79f68ed http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_95031770f51412b81ca4dfde8484075c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_28e5342a00614f0c8716256400d45347 |
| publicationDate | 2021-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102257985-B1 |
| titleOfInvention | Hybrid solar cells with N-type semiconductors modified with nitrogen-containing polymers and the Fabrication methode thereof |
| abstract | The present invention is a surface-modified inorganic N-type semiconductor layer having relates to a hybrid solar cell, and a method of manufacture, and more particularly, to an amine group (amine group using a nitrogen-containing polymer; -NR 2, NR 3 + X - ), a nitrogen-containing polymer having a nitro group (-NO 2 ) or a cyano group (-C≡N) is brought into contact with the N-type semiconductor layer. Adsorption is possible, and (2) it prevents the N-type semiconductor-hole transport agent interface recombination by preventing direct contact between the N-type semiconductor and the hole transport agent (improving the open voltage → improving the efficiency), and (3) the excited P There is an effect that electron injection from the type semiconductor to the N type semiconductor is advantageous (short-circuit current improvement → efficiency improvement). |
| priorityDate | 2020-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 175.