| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0623
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0705 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-41
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78645
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
2014-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2021-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-102257058-B1 |
| titleOfInvention |
Semiconductor device |
| abstract |
An object of the present invention is to provide a semiconductor device having excellent charge retention characteristics. As a transistor in which a gate is connected to a node that holds electric charges, a transistor with a small leakage current is provided by forming a thick gate insulating film. This newly provided transistor and a transistor using an oxide semiconductor for a semiconductor layer serving as a channel formation region are used to form a node for holding charge, and to hold the charge according to the data at this node. |
| priorityDate |
2013-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |