http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102255577-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B44-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-16 |
| filingDate | 2014-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102255577-B1 |
| titleOfInvention | Etching composition |
| abstract | The present invention discloses an etchant composition. The disclosed etchant composition of the present invention includes hydrogen peroxide, an etch inhibitor, a chelating agent, an etch additive, an oxide semiconductor protective agent, a pH adjuster, and water. As described above, since the etchant composition according to the present invention does not contain a fluorine-based compound and has a high pH, the oxide semiconductor is not etched during the copper and molybdenum alloy etching process. Through this, the etchant composition according to the present invention has an effect of minimizing defects that may occur in the etching process. |
| priorityDate | 2014-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 74.