http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102253587-B1

Outgoing Links

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-04
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B15-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B15-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-06
filingDate 2018-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2021-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2021-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-102253587-B1
titleOfInvention Silicon single crystal ingot manufacturing method and silicon single crystal growing device
abstract A method for manufacturing a silicon single crystal ingot having a small n-type and high resistance tolerance of specific resistance in a crystal growth direction and a silicon single crystal growing apparatus suitable for use in a power device is provided. In a method of manufacturing a silicon single crystal ingot using Sb or As as an n-type dopant by a silicon single crystal growing apparatus using a Czochralski method, while performing the pulling of the silicon single crystal ingot (1), the n-type dopant is included as a constituent element. A measurement process of measuring the gas concentration of the compound gas, the pressure in the chamber 30, the flow rate of the Ar gas, and the induction part 70 and the silicon melt 10 so that the measured gas concentration falls within the range of the target gas concentration. A pulling condition value adjusting process is performed for adjusting the pulling condition value including at least one of the gaps G of.
priorityDate 2017-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 24.