http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102249640-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-145 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22 |
| filingDate | 2014-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102249640-B1 |
| titleOfInvention | Light emitting device, light emitting device package having the same, and light system having the same |
| abstract | The embodiment relates to a light emitting device and a lighting system including the same. The light emitting device according to the embodiment includes a substrate, a first conductive type semiconductor layer including a v-pit on the substrate, an active layer on the first conductive type semiconductor layer, and diffusion on the active layer. A prevention layer, a super lattice layer on the diffusion barrier layer, and a second conductive type semiconductor layer on the super lattice layer, and the super lattice layer may include an MgN layer and a GaN layer alternately. |
| priorityDate | 2014-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.