http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102246529-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1248 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2010-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102246529-B1 |
| titleOfInvention | Semiconductor device |
| abstract | It is an object to provide a semiconductor device having a low power consumption as a semiconductor device including a thin film transistor using an oxide semiconductor layer. It is an object to provide a semiconductor device having high reliability as a semiconductor device including a thin film transistor using an oxide semiconductor layer. In a semiconductor device, a gate electrode layer (gate wiring layer) intersects a wiring layer electrically connected to a source electrode layer or a drain electrode layer with a gate insulating layer and an insulating layer covering the oxide semiconductor layer of the thin film transistor interposed therebetween. Accordingly, the parasitic capacitance formed by the stacked structure of the gate electrode layer, the gate insulating layer, and the source or drain electrode layers can be reduced, so that low power consumption of the semiconductor device can be realized. |
| priorityDate | 2009-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 58.