http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102245352-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K5-15093 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78648 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K19-09443 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K3-356121 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41733 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K19-096 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K3-037 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C19-28 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2014-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102245352-B1 |
| titleOfInvention | Transistor, clocked inverter circuit, sequential circuit, and semiconductor device including sequential circuit |
| abstract | The present invention provides a transistor having excellent electrical characteristics (eg, on-current, field effect mobility, frequency characteristics, etc.). The transistor has an oxide semiconductor layer having a channel formation region, first and second gate electrodes, a source electrode, and a drain electrode. The first and second gate electrodes are provided by sandwiching the oxide semiconductor layer. The oxide semiconductor layer has a pair of side surfaces in contact with the source electrode and the drain electrode, and has a region surrounded by the first and second gate electrodes without sandwiching the source electrode and the drain electrode. |
| priorityDate | 2013-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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