abstract |
The present invention relates to a sintered paste composition for bonding power semiconductors, comprising a mixed powder of a first metal powder, a second metal powder, and a nanoceramic powder, and the specific surface area of the mixed powder is 0.1m 2 /g or more 10m 2 / By providing a sintered paste composition for bonding power semiconductors, which is less than or equal to g, it is possible to maintain high reliability for a long time at a high temperature bonding temperature. |