http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102241665-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67017 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45578 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45574 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45546 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67098 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2015-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102241665-B1 |
| titleOfInvention | Reaction tube, substrate processing device and semiconductor device manufacturing method |
| abstract | It provides a technology capable of purging the heat insulation area without adversely affecting the treatment area. A processing chamber including a processing region for processing a substrate and a heat insulating region located below the processing region, and a first exhaust unit for exhausting the atmosphere of the processing region, and at a position overlapping the heat insulating region in the height direction It is formed and has a second exhaust part for exhausting the atmosphere of the heat insulating area. |
| priorityDate | 2015-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 66.