http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102240635-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08K2201-005 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08K2003-3009 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08K3-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L2201-08 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08K3-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L27-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08K3-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08K3-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L101-12 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08K3-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L27-18 |
| filingDate | 2018-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102240635-B1 |
| titleOfInvention | Crosslinkable elastomer composition and fluororubber molded product |
| abstract | An object of the present invention is to provide a crosslinkable elastomer composition having a small weight reduction ratio and particle generation amount after plasma irradiation under specific conditions, and compression set at high temperature. The present invention relates to a crosslinkable elastomer composition containing a crosslinkable elastomer and a non-oxide ceramics whose surface is oxidized. In addition, the weight reduction ratio after O 2 plasma irradiation under the following conditions is 2.5% by mass or less, the particle generation amount is 0.05% by mass or less, the weight reduction ratio after NF 3 plasma irradiation is 1.8% by mass or less, and the particle generation amount is 0.05% by mass or less. And, it relates to a fluororubber molded article having a compression set of 50% or less at 300°C for 70 hours. group Sample: O-ring (AS-568A-214) How to measure: (1) O 2 plasma Plasma irradiation device: ICP high-density plasma device (MODEL RIE-101iPH manufactured by Samko Corporation) Investigation conditions Gas Flow: 16SCCM RF power: 400Wh Pressure: 2.66Pa Etching time: 30 minutes Temperature: 100℃ Conditions in which the etching rate of the perfluoro elastomer (non-filler) is equivalent to 12000 Å/min. (2) NF 3 plasma Plasma irradiation device: ICP high-density plasma device (MODEL RIE-101iPH manufactured by Samko Corporation) Investigation conditions Gas Flow: 16SCCM RF power: 400Wh Pressure: 10Pa Etching time: 4 hours Temperature: 200℃ Conditions in which the etching rate of the silicon wafer thermal oxide film (SiO 2) is 90 Å/min. |
| priorityDate | 2017-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 267.