| abstract |
(Problem) To provide a laser processing apparatus capable of efficiently cutting a GaN ingot to produce a GaN wafer, and a method for producing the GaN wafer. (Solving means) A laser processing apparatus for generating a GaN wafer from a GaN ingot, comprising a laser beam irradiation means for irradiating a laser beam having a wavelength having transmittance to a GaN ingot held on a chuck table. The laser beam irradiation means includes a laser oscillator that oscillates a laser beam, and the laser oscillator comprises a seeder that oscillates a high-frequency pulsed laser, and a high-frequency pulse oscillated by the seeder is thinned out at a predetermined repetition frequency. It includes a thinning section that uses the high-frequency pulse as a sub-pulse to generate one burst pulse, and an amplifier that amplifies the generated burst pulse. |