| abstract |
An aqueous cleaning composition is provided after copper chemical mechanical planarization. The composition comprises an organic base, a copper etchant, an organic ligand, a corrosion inhibitor and water, wherein the organic base is at a concentration of at least 200 ppm, the copper etchant is at a concentration of at least 200 ppm, and the organic ligand is at a concentration of at least 50 ppm. And the corrosion inhibitor is at a concentration of at least 10 ppm. When used in a cleaning procedure after copper chemical mechanical planarization, the aqueous cleaning composition can effectively remove residual contaminants from the wafer surface, reduce the number of defects on the wafer surface, and at the same time impart better surface roughness to the wafer. |