http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102237111-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-04 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-145 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-025 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0025 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 |
| filingDate | 2014-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102237111-B1 |
| titleOfInvention | Light emitting device and lighting system |
| abstract | The embodiment relates to a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and a lighting system. The light emitting device according to the embodiment includes a first conductivity type semiconductor layer; An active layer on the first conductivity type semiconductor layer; A gallium nitride-based super lattice layer on the active layer; A second conductivity type semiconductor layer may be included on the gallium nitride-based superlattice structure layer. The gallium nitride-based superlattice layer may include a first gallium nitride-based superlattice layer on the active layer, and a second gallium nitride-based superlattice layer on the first gallium nitride-based superlattice layer. |
| priorityDate | 2014-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.