Predicate |
Object |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02614 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02628 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-028 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02623 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02505 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-267 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02527 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66015 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02499 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02664 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02444 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02568 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02513 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1606 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02425 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0259 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02422 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0242 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
filingDate |
2014-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2021-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate |
2021-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-102232756-B1 |
titleOfInvention |
Electronic device having graphene-semiconductor multi junction and method of manufacturing the same |
abstract |
An electronic device having a graphene-semiconductor multi-junction and a method of manufacturing the same are disclosed. The disclosed electronic device includes a graphene layer having at least one graphene protrusion and a semiconductor layer covering the graphene layer. The side surface of the graphene protrusion may have a multi-edge non-planar surface, and the graphene protrusion may have a stepped side surface. The graphene layer includes a plurality of nano-crystal graphene. The graphene layer includes a lower graphene layer including a plurality of nanocrystalline graphene and the graphene protrusions formed on the lower graphene layer. The semiconductor layer may include a transition metal dichalcogenide (TMDC) layer. Each of the plurality of graphene protrusions may include a plurality of nanocrystalline graphene. |
priorityDate |
2014-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |