http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102232133-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78609 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78648 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2014-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102232133-B1 |
| titleOfInvention | Semiconductor device |
| abstract | The present invention is characterized by imparting good electrical properties to a semiconductor device. Alternatively, a semiconductor device in which fluctuations in electrical characteristics are suppressed is provided. Alternatively, a highly reliable semiconductor device is provided. A first insulating layer, a second insulating layer over the first insulating layer and having an opening, a semiconductor layer over the first insulating layer, a source electrode and a drain electrode spaced apart from each other in a region overlapping the semiconductor layer, and a semiconductor layer And a gate electrode overlapping with and a gate insulating layer between the semiconductor layer and the gate electrode. In addition, the first insulating layer includes an oxide, and the opening of the second insulating layer is located inside the semiconductor layer when viewed from the top side, and is disposed so as to overlap at least a portion of the gate electrode. |
| priorityDate | 2013-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 54.