http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102231296-B1

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F11-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-18
filingDate 2019-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2021-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2021-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-102231296-B1
titleOfInvention A organic-metal precirsor compound and othin film prepared by using the same
abstract The organometallic precursor compound of the present invention and a method for producing an organometallic thin film using the same satisfy high volatility, excellent chemical and thermal stability, and have a significantly improved thin film deposition rate even at low temperatures. In addition, by providing an organometallic precursor compound that can be used to form a dielectric thin film in a semiconductor device, it is possible to prepare an organometallic and/or metal-containing thin film with improved characteristics deterioration due to by-products.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20220158601-A
priorityDate 2018-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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