| abstract |
A multi-component coating composition for the surface of a semiconductor process chamber component comprises at least one first film layer of yttrium oxide or yttrium fluoride coated on the surface of a semiconductor process chamber component using an atomic layer deposition process, and atomic layer deposition. At least one second film layer of additional oxide or additional fluoride coated on the surface of the semiconductor process chamber component using the process, wherein the multi-component coating composition is YO x F y , YAl x O y , YZr x O y and YZr x Al y O z . |