| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G64-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-068 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-477
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D5-008
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D169-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-385
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0231
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D7-61 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D7-61 |
| filingDate |
2014-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2021-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-102226809-B1 |
| titleOfInvention |
Semiconductor element, method for producing same and aliphatic polycarbonate |
| abstract |
The present invention is a thin film transistor that can easily realize self-aligning formation of source/drain regions without using each process under vacuum or under low pressure, or without using expensive equipment, and a manufacturing method thereof The task is to provide One method of manufacturing a thin film transistor according to the present invention includes a gate electrode layer 40 disposed on the semiconductor layer 20 with a gate insulating layer 30 therebetween, and a semiconductor layer ( An aliphatic polycarbonate layer forming step of forming an aliphatic polycarbonate layer 50 having a dopant in which 20) is an n-type or p-type semiconductor layer, and the dopant is introduced into the semiconductor layer 20, and at the same time, the aliphatic polycarbonate layer is It includes a heating process of heating the carbonate layer 50 to a temperature at which it decomposes. |
| priorityDate |
2013-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |