http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102224913-B1

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K11-62
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filingDate 2019-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2021-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2021-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-102224913-B1
titleOfInvention Method for fabricating of Cu-In-S based quantum dots emitting visible to near-Infrared
abstract The quantum dot manufacturing method according to the present invention comprises the steps of forming a Cu-In-S-based core in a quantum dot growth solution by mixing and heating a copper precursor, a strong acid-strong base bonding property of an indium precursor, a sulfur precursor, a sulfur powder, and a solvent; And forming a core/shell quantum dot by further applying a ZnS stock solution into the quantum dot growth solution in which the core is formed to form a ZnS shell on the core, wherein the emission peak wavelength of the quantum dot is tuned. In the step of forming the core, the growth condition variable of the core is adjusted, and the growth condition variable is the copper precursor/indium precursor molar ratio control for forming the core, the quantum dot growth solution heating temperature and/or reaction time control, It characterized in that it is at least any one of adding a post-treatment of alloying Ag between the step of forming the core and the step of forming the ZnS shell, and changing the indium precursor to an indium precursor having a strong acid-weak base bonding property.
priorityDate 2019-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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