| abstract |
In a transistor including an oxide semiconductor layer, an oxide insulating layer is formed in contact with the oxide semiconductor layer. Thereafter, oxygen is introduced (added) to the oxide semiconductor layer through the oxide insulating layer, and heat treatment is performed. Through these steps of oxygen introduction and heat treatment, impurities such as hydrogen, moisture, hydroxyl groups, or hydrides are intentionally removed from the oxide semiconductor layer, and thus the oxide semiconductor layer is fixed. |