| abstract |
A nonvolatile memory device according to an embodiment of the present disclosure includes a memory cell array and a page buffer circuit connected to the memory cell array through a plurality of bit lines, and the page buffer circuit includes a plurality of page buffers, and Each of the page buffers of the plurality of bit lines through a bit line selection circuit connected to some of the bit lines, through a bit line selection circuit, through a bit line shutoff circuit connected to some of the bit lines, and a data line. A plurality of bit line selection circuits, a plurality of bit line shutoff circuits, and a plurality of latch circuits included in at least some page buffers among the plurality of page buffers, including a latch circuit for inputting and outputting data, include the memory It may be sequentially disposed on the main surface of the substrate in a direction away from the cell array. |