| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02488
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8258
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823871
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30625
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823892
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02664
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8258
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 |
| filingDate |
2018-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2021-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-102215866-B1 |
| titleOfInvention |
Method for forming germanium islands using selective epitaxial growth and sacrificial fill layers |
| abstract |
A method for obtaining a semiconductor island includes epitaxially growing a semiconductor structure over a substrate having a mask layer defining a region not covered by the mask layer. The semiconductor structure includes a first portion positioned adjacent to the mask layer and a second portion positioned away from the mask layer. The first portion has a first height that is less than a second height of a portion of the mask layer positioned adjacent the first portion. The second portion has a third height that is equal to or greater than the second height. The method also includes forming a fill layer over at least the first portion; And subsequently removing at least a portion of the semiconductor structure positioned above the second height. A device manufactured by this method is also disclosed. |
| priorityDate |
2018-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |