http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102215640-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-505 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-303 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 |
| filingDate | 2014-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102215640-B1 |
| titleOfInvention | Substrate processing apparatus and method of forming a thin film and method of manufacturing a semiconductor device using the same |
| abstract | The present invention relates to the first and second processing regions, the first and second divided regions that divide the first and second processing regions, and a part of the reaction gas in the first processing region between the second processing region and the second divided region. A substrate processing apparatus including a third processing region in which plasma doping is performed by introducing a layer, a thin film forming method using the same, and a method of manufacturing a semiconductor device are provided. |
| priorityDate | 2014-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 50.