http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102213518-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-13306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2013-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102213518-B1 |
| titleOfInvention | Semiconductor device |
| abstract | A semiconductor device including an oxide semiconductor is provided, in which changes in electrical properties are suppressed and reliability is improved. In a semiconductor device including an oxide semiconductor film on which a channel formation region is formed, an insulating film containing at least nitrogen and suppressing the ingress of water, and an insulating film for suppressing the entry of nitrogen emitted from the insulating film are provided over the oxide semiconductor film. As water entering the oxide semiconductor film, water contained in the air, water in the film provided on the insulating film for suppressing the entry of water, and the like may be given. Moreover, as the insulating film that suppresses the ingress of water, a nitride insulating film can be used, and the amount of hydrogen molecules released by heating from the nitride insulating film is less than 5.0×10 21 molecules/cm 3. |
| priorityDate | 2012-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 72.